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December 2013
FQP6N80C / FQPF6N80C
N-Channel QFET ? MOSFET
800 V, 5.5 A, 2.5 ?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
? 5.5 A, 800 V, R DS(on) = 2.5 ? (Max.) @ V GS = 10 V,
I D = 2.75 A
? Low Gate Charge (Typ. 21 nC)
? Low Crss (Typ. 8 pF)
? 100% Avalanche Tested
D
GD
D
S
TO-220
G
S
TO-220F
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP6N80C
FQPF6N80C /
FQPF6N80CT
800
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
5.5
3.2
5.5 *
3.2 *
A
A
I DM
Drain Current
- Pulsed
(Note 1)
22
22 *
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum L ead T emperature for S oldering,
1/8 " from C ase for 5 S econds .
(Note 2)
(Note 1)
(Note 1)
(Note 3)
158
1.27
680
5.5
15.8
4.5
-55 to +150
300
51
0.41
mJ
A
mJ
V/ns
W
W/°C
°C
°C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP 6 N80C
0. 7 9
0.5
62.5
FQPF 6 N80C /
FQPF6N80CT
2. 45
--
62.5
Unit
°C / W
°C / W
°C / W
?2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
1
www.fairchildsemi.com
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